Method of forming a carbon-containing layer and structure including the layer

ABSTRACT

A method of forming a carbon-containing layer on a surface of a substrate is disclosed. The method can include providing a substrate within a reaction chamber of a reactor, heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules, providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate. The carbon compound can include 10 or more carbon atoms. Exemplary methods provide carbon-containing layer with desired density and transparency.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No. 62/901,486, filed on Sep. 17, 2019, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.

FIELD OF INVENTION

The present disclosure generally relates to methods of forming structures, to structures, and to systems for forming the structures. More particularly, the disclosure relates to methods of forming carbon-containing layers suitable for use in the formation of structures, to structures including a carbon-containing layer, and to systems for forming the carbon-containing layer.

BACKGROUND OF THE DISCLOSURE

During the manufacture of electronic devices, fine patterns of features can be formed on a surface of a substrate by patterning the surface of the substrate and etching material from the substrate surface using, for example, plasma-assisted etching processes. As a density of devices on a substrate increases, it becomes increasingly desirable to form features with smaller dimensions.

Photoresist is often used to pattern a surface of a substrate prior to etching. A pattern can be formed in the photoresist by applying a layer of photoresist to a surface of the substrate, masking the surface of the photoresist, exposing the unmasked portions of the photoresist to radiation, such as ultraviolet light or an electron beam, and removing a portion (e.g., the unmasked or masked portion) of the photoresist, while leaving a portion of the photoresist on the substrate surface.

In some cases, photoresist may not exhibit a desired selectivity relative to the material to be etched. In such cases, a pattern can be transferred to a hard mask material, which can be used as an etch mask.

Because of their etch selectivity with respect to several etchants (e.g., etchants used to etch dielectric materials or the like), and their ability to be easily removed, carbon-containing layers have been used in the manufacture of device structures. In many applications, it may be desirable to use a carbon-containing layer as a hard mask. In such cases, the carbon-containing material may desirably have a relatively high density (higher density generally correlates to higher etch selectivity) and a relatively low extinction coefficient (k-value) for high transparency—which allows for better alignment of a photoresist mask.

Typical carbon-containing layers used for hard mask materials exhibit relatively high k-values. Attempts to reduce the k-value of carbon-containing layers generally result in carbon-containing layers with lower density. And, attempts to increase a density of carbon-containing layers generally result in carbon-containing layers having relatively high k-values.

Accordingly, improved methods of forming carbon-containing layers are desired. In particular, methods of forming carbon-containing layers with relatively high density and relatively low k-values are desired. Further, structures including improved carbon-containing layers and systems for forming the improved carbon-containing layers are desired.

Any discussion of problems and solutions set forth in this section has been included in this disclosure solely for the purpose of providing a context for the present disclosure, and should not be taken as an admission that any or all of the discussion was known at the time the invention was made.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure relate to methods of forming a carbon-containing layer on a surface of a substrate, to systems for forming carbon-containing layers, and to structures including carbon-containing layers. While the ways in which various embodiments of the present disclosure address drawbacks of prior methods, systems, and structures are discussed in more detail below, in general, various embodiments of the disclosure provide improved methods of forming carbon-containing layers that can be used to form carbon-containing layers with both relatively low extinction coefficients and relatively high density. Various techniques described herein provide carbon-containing layers suitable for use as hard mark material and structures including a carbon containing layer suitable for use as a hard mark. However, unless otherwise noted, the disclosure and invention are not limited to such applications.

In accordance with exemplary embodiments of the disclosure, a method of forming a carbon-containing layer on a surface of a substrate includes providing a substrate within a reaction chamber of a reactor, heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules, providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate. The carbon precursor can be or include a carbon compound comprising one or more sp3 hybridization carbon bonds. Additionally or alternatively, the carbon compound can include 10 or more carbon atoms. In accordance with some examples of the disclosure, the carbon compound is or includes a cyclic compound. The carbon precursor can be or include a solid at normal temperature and pressure. The carbon compound can include two or more sp3 hybridization carbon-carbon bonds or three or more sp3 hybridization carbon-carbon bonds. A molecular weight of the carbon compound can range from about 130 to about 220 Da. In accordance with exemplary aspects of these embodiments, the carbon compound can be represented by the chemical formula C_(n)H_(m)H_(z), wherein n is an integer greater than or equal to 10, m is an integer greater than or equal to 10, and z is an integer greater than or equal to zero. For example, n can range from about 10 to about 12, m can range from about 15 to about 22, and/or z can range from zero to about 5. X can include one or more of O, N, F, S, Cl, and Br, in any combination. A method can further include a step of providing a reactant to the reaction chamber. Activated species can be formed from the reactant. The reactant can include an oxidizer or oxidant, such as one or more of O₂, ozone, CO, CO₂, COS, NO_(x), and SO_(x).

In accordance with additional exemplary embodiments of the disclosure, a method of forming a structure is provided. The method of forming a structure can include any method of forming a carbon-containing layer on a surface of a substrate as set forth herein. A method of forming a structure can additionally include a step of depositing a layer of photoresist overlying the carbon-containing layer. Additionally or alternatively, the method of forming a structure can further include a step of etching the carbon-containing layer.

In accordance with further embodiments of the disclosure, a structure is provided. The structure can be formed according to a method as set forth herein. The structure can include a substrate and a carbon-containing layer on a surface of the substrate. A thickness of the carbon-containing layer can be between about 10 and about 100, about 300 and about 1000, or about 1000 and about 2000 nm. An amount of hydrogen in the carbon-containing layer can be less than 20 at %, less than 10 at %, or less than 5 at %. An extinction coefficient at 633 nm (k-value) of the carbon-containing layer can be less than 0.05 or less than 0.2. A density of the carbon-containing layer can be greater than 2.0 g/cc, greater than 2.3 g/cc, or greater than 2.6 g/cc.

In accordance with yet additional examples of the disclosure, a system configured to perform a method as described herein is provided.

These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures; the invention not being limited to any particular embodiment(s) disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of exemplary embodiments of the present disclosure can be derived by referring to the detailed description and claims when considered in connection with the following illustrative figures.

FIG. 1 illustrates a method in accordance with at least one embodiment of the disclosure.

FIG. 2 illustrates a structure in accordance with at least one embodiment of the disclosure.

FIG. 3 illustrates structures formed according to a method in accordance with at least one embodiment of the disclosure.

FIG. 4 illustrates a system in accordance with at least one embodiment of the disclosure.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and/or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

The present disclosure generally relates to methods of forming a carbon-containing layer on a surface of a substrate, to structures formed using the methods, and to systems for performing the methods. As described in more detail below, exemplary methods can be used to form carbon-containing layers with desirable properties, such as low k-values and high density. The methods and apparatus described herein can be used to form hard masks during the manufacture of structures or devices. However, unless noted otherwise, the disclosure and invention is not so limited.

In this disclosure, “gas” may include material that is a gas at normal temperature and pressure, a vaporized solid and/or a vaporized liquid, and may be constituted by a single gas or a mixture of gases, depending on the context. A gas other than the process gas, i.e., a gas introduced without passing through a gas distribution assembly, such as a showerhead, other gas distribution device, or the like, may be used for, e.g., sealing the reaction space, and may include a seal gas, such as a rare gas. The term “inert gas” refers to a gas that does not take part in a chemical reaction to an appreciable extent and/or a gas that can excite a precursor when RF power is applied.

As used herein, the term “substrate” can refer to any underlying material or materials that may be used to form, or upon which, a device, a circuit, or a film may be formed. A substrate can include a bulk material, such as silicon (e.g., single-crystal silicon), other Group IV materials, such as germanium, or compound semiconductor materials, such as GaAs, and can include one or more layers overlying or underlying the bulk material. Further, the substrate can include various features, such as recesses, lines, and the like formed within or on at least a portion of a layer of the substrate.

In some embodiments, “film” refers to a layer extending in a direction perpendicular to a thickness direction to cover an entire target or concerned surface, or simply a layer covering a target or concerned surface. In some embodiments, “layer” refers to a structure having a certain thickness formed on a surface or a synonym of film or a non-film structure. A layer can be continuous or noncontinuous. A film or layer may be constituted by a discrete single film or layer having certain characteristics or multiple films or layers, and a boundary between adjacent films or layers may or may not be clear and may or may not be established based on physical, chemical, and/or any other characteristics, formation processes or sequence, and/or functions or purposes of the adjacent films or layers.

Further, in this disclosure, any two numbers of a variable can constitute a workable range of the variable, and any ranges indicated may include or exclude the endpoints. Additionally, any values of variables indicated (regardless of whether they are indicated with “about” or not) may refer to precise values or approximate values and include equivalents, and may refer to average, median, representative, majority, etc. in some embodiments. Further, in this disclosure, the terms “including,” “constituted by” and “having” refer independently to “typically or broadly comprising,” “comprising,” “consisting essentially of,” or “consisting of” in some embodiments. In this disclosure, any defined meanings do not necessarily exclude ordinary and customary meanings in some embodiments.

In this disclosure, “continuously” can refer to one or more of without breaking a vacuum, without interruption as a timeline, without any material intervening step, without changing treatment conditions, immediately thereafter, as a next step, or without an intervening discrete physical or chemical structure between two structures other than the two structures in some embodiments.

Turning now to the figures, FIG. 1 illustrates a method 100 of forming a carbon-containing layer on a surface of a substrate in accordance with at least one embodiment of the disclosure. Method 100 includes the steps of providing a substrate within a reaction chamber (step 102), heating a carbon precursor to produce a vaporized gas (step 104), providing the vaporized gas to the reaction chamber (step 106), and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate (step 108).

During step 102, a substrate can be loaded onto a susceptor within a reaction chamber. Once the substrate is loaded onto the susceptor, a gate valve can be closed. In some cases, the susceptor can be moved to an operating position.

During step 104, a carbon precursor is heated to produce a vaporized gas comprising carbon-containing molecules. Although separately illustrated and shown as after step 102, step 104 can occur before, during, and/or after step 102.

The carbon precursor can be heated to a melting temperature or higher, a sublimation temperature or higher, or a boiling temperature or higher. In some cases, a melting temperature of the carbon compound is greater than or equal to 210° C. at a pressure of 100 kPa. By way of examples, the carbon precursor can be heated to a temperature of about 130° C. to about 150° C., about 150° C. to about 180° C., or about 80° C. to about 130° C.

In accordance with various examples of the disclosure, the carbon precursor comprises a carbon compound comprising one or more, two or more, or three of more sp3 hybridization carbon (e.g., C—C) bonds. A molecular weight of the carbon compound can range from, for example, about 130 to about 220 Da. In accordance with further examples of the disclosure, the carbon compound can be represented by the chemical formula C_(n)H_(m)X_(z), wherein n is an integer greater than or equal to 10, m is an integer greater than or equal to 10, and z is an integer greater than or equal to zero. The carbon compound can be cyclic or include a cyclic portion. In accordance with further examples, n can range from about 10 to about 12, m can range from about 15 to about 22, and/or z can range from zero to about 5. X can comprise one or more of O, N, F, S, CI, and Br, in any combination. For example, X can include NO, SO, or other combinations of elements. In some cases, the carbon compound comprises a hydrocarbon. In accordance with further examples, the carbon compound is a solid at normal temperature and pressure. In these cases, the carbon compound can sublime during step 104. By way of particular examples, the carbon precursor can be or include one or more of adamantane, camphor, adamantanol, and acetamidoadamantane.

Step 104 can also include heating lines between a carbon precursor source and the reaction chamber. In accordance with examples of the disclosure, the lines can be heated to a temperature of about 140° C. and about 160° C., about 160° C. and about 190° C., or about 90° C. and about 140° C. In addition, a gas distribution assembly, such as a showerhead, can be heated to a temperature of about 80° C. and about 200° C.

During step 106, the vaporized gas that is produced during step 104 is provided to the reaction chamber. The vaporized gas can be supplied to the reaction chamber directly from a source that is heated. In some cases, the vaporized gas can be mixed with a carrier gas, such as an inert gas, to facilitate transport of the vaporized gas to the reaction chamber and/or to provide a desired amount or concentration of the vaporized gas to the reaction chamber.

A flowrate of the vaporized gas into a reaction chamber after vaporization is not particularly restricted. Exemplary flowrates include 30 sccm to approximately 1000 sccm (e.g., 50 sccm, 100 sccm, 150 sccm, 200 sccm, 300 sccm, 400 sccm, 500 sccm, and including a range defined by any two of the foregoing values).

A flowrate of an inert gas introduced into a reaction chamber can be 0 sccm to approximately 3000 sccm (e.g., 30 sccm, 50 sccm, 100 sccm, 150 sccm, 200 sccm, 300 sccm, 500 sccm, 1000 sccm, 2000 sccm, and including a range defined by any two of the foregoing values). Exemplary inert gases can be one of or a combination of two or more of Ar, He, Ne, Kr, Xe, and N2, such as Ar or/and He.

In some cases, one or more other gases can be provided to the reaction chamber during step 106. For example, an additive gas, such as a gas containing one or more of O, N, F, S, Cl, and Br, in any combination can additionally be provided to the reaction chamber during step 106. For example, the one or more other gases can include a reactant, such as an oxidant or oxidizer. Exemplary oxidizers include one or more of O₂, ozone, CO, CO₂, COS, NO_(R), and SO_(x). Additionally, as a reducing gas, hydrogen, ammonia, carbon monoxide, etc. can also be used as an additive gas. A flow rate of an additive gas introduced into a reaction chamber can be approximately 0 sccm to approximately 300 sccm (e.g., 30 sccm, 50 sccm, 100 sccm, 150 sccm, 200 sccm, and including a range defined by any two of the foregoing values).

During step 106, a pressure within the reaction chamber can be allowed to raise to a desired operating pressure, and the flowrate of the inert gas can be set to a desired level. In addition, a rare gas, such as helium, can be supplied to a reactor including the reaction chamber to provide a gas curtain between a reaction space and another section of a reactor, such as a load/unload space. The gas flowrates and a pressure within the reaction chamber can be allowed to stabilize for a period of time (e.g., about 1 to about 10 seconds).

During step 108, a carbon-containing layer is formed on the surface of a substrate. Although separately illustrated, steps 106 and 108 can overlap or be performed at the same time. During this step, a radio frequency (RF) power (e.g., about 100 to about 3000 W) can be applied to, for example, parallel plates within the reaction chamber to strike a plasma. A pressure within the reaction chamber during step 108 can be between about 400 Pa and about 1100 Pa, about 1 Pa and about 100 Pa, or about 100 Pa and about 400 Pa. A temperature within the reaction chamber (e.g., a temperature of a susceptor within the reaction chamber) during step 108 can be between about 200° C. and about 500° C., about 50° C. and about 200° C.

During step 108, the carbon compound can maintain at least some of its sp3 hybridization. Hydrogen can be removed during the film formation/polymerization step using, for example, an oxidizer as noted herein.

Table 1 below illustrates exemplary process conditions for steps 106 and 108.

TABLE 1 Conditions for Steps 106 and 108 RC Pressure 1-1100 Pa Susceptor temperature 200-500° C. Flowrate of carbon precursor 10-200 sccm Flowrate of reactant 10-400 sccm Flowrate of reaction chamber inert gas 0.2-4.0 slm Flowrate of sealing gas 0.2-2.0 slm Direct plasma power 100-3000 W Distance between electrodes 7.5-15.0 mm Duration of step 106 1-10 sec Duration of step 108 60-600 sec

The above-indicated power for a 300-mm wafer can be converted to W/cm² (wattage per unit area of a wafer) which can apply to a wafer having a different diameter such as 200 mm or 450 mm. The substrate temperature can be considered to be a temperature of the reaction space during a process.

After film formation on a substrate is completed, cleaning of a wall surface of the reaction chamber can be performed by introducing a gas containing, for example, radical molecules (e.g., from a remote plasma unit) containing one or more of O, F into the reaction chamber; or after film formation on a substrate is completed, cleaning of a wall surface of the reaction chamber can be performed by introducing a gas containing molecules containing 0, F into a reaction chamber and generating plasma between electrodes.

In accordance with exemplary embodiments of the disclosure, after cleaning a wall surface of the reaction chamber is completed, removal of gas or byproducts can be removed from the reaction chamber by purging—e.g., with a vacuum and/or a purge gas, such as an inert gas and/or a non-activated reactant. Further, in order to improve mechanical strength of a carbon-containing film, heat curing of the carbon-containing film can be performed by exposing the carbon-containing film to one or more of UV and EB radiation.

FIG. 2 illustrates a structure 200 in accordance with exemplary embodiments of the disclosure. Structure 200 can be formed according to a method as described herein, such as method 100.

Structure 200 includes a substrate 202 and a carbon-containing layer 204. Substrate 200 can include any substrate as described herein. Carbon-containing layer 204 can include a film comprising sp3 hybridization carbon bonds. An extinction coefficient of carbon-containing layer 204 at 633 nm (k-value) of the carbon-containing layer can be less than 0.05 or less than 0.2. Additionally or alternatively, a density of the carbon-containing layer can be greater than 2.0 g/cc, greater than 2.3 g/cc, or greater than 2.6 g/cc. Thus, the film can have relatively high density and relatively low k-value. An amount of hydrogen in carbon-containing layer 204 can be less than 20 at %, less than 10 at %, or less than 5 at %. A thickness of carbon-containing layer 204 can vary by application. For example, the thickness can be between about 10 and about 100, about 300 and about 1000, or about 1000 and about 2000 nm.

FIG. 3 illustrates additional structures formed during the manufacture of a device. FIG. 3(a) illustrates a structure 302, which includes a substrate 304, a material layer 306, a carbon-containing layer 308, and a photoresist layer 310.

Substrate 304 can include, for example, any of the substrate materials noted herein. Material layer 306 includes a material to be etched. Material layer 306 can include, for example, a dielectric film (e.g., silicon oxide, SiOF, SiC, other low-dielectric-constant films, or the like), a capacitor material (e.g., SiN, Al₂O₃, HfO₂, Ta₂O₃, or the like), an electrode material, or conductive material (e.g., polysilicon, TiN, TaN, Ru, Al, and the like), or other suitable material. Carbon-containing layer 308 can include any carbon-containing layer as described herein, such as carbon-containing layer 204. Photoresist layer can include any suitable positive or negative photoresist layer.

FIG. 3(b) illustrates a structure 336, which is the same as structure 302, except photoresist layer 310 has been patterned by removing sections of photoresist layer 310 to leave photoresist features 312, 314, and 316 on a surface of carbon-containing layer 308. Photoresist features 312, 314, and 316 can be used as a template for subsequent removal of portions of carbon-containing layer 308.

FIG. 3(c) illustrates a structure 338, in which portions of carbon-containing layer 308 have been removed to leave features 318, 320, and 322 on a surface of material layer 306. Features 318, 320, and 322 can include carbon-containing material 339 and may also include photoresist material 341. Features 318, 320, and 322 can be formed using an oxidant (e.g., O₂, CO, CO₂, C_(x)F_(y), HBr, C_(x)F_(y)H_(z) and these mixed gases, in any combination) as an etchant. Features 318, 320, and 322 can be used as a hard mask for etching of material layer 306.

FIG. 3(d) illustrates a structure 340, which includes features 324, 326, and 328, which can be formed by etching material layer 306. Exemplary etchants that can be used to etch material layer 306 include O₂, CO, CO₂, CxF_(y), HBr, C_(x)F_(y)H_(z) and these mixed gases, in any combination. Features 324, 326, and 328 can include material 329 and carbon-containing material 331 (which may be reduced in height, compared to carbon-containing material 339).

Finally, structure 342, illustrated in FIG. 3(e) can be formed by removing carbon-containing material 331. By way of example, containing material 331 can be removed using an aching or other suitable process.

FIG. 4 is a schematic view of a system 400 in accordance with further exemplary embodiments of the disclosure. System 400 can be used to perform a method as described herein and/or to form a structure, or portion thereof, as described herein.

System 400 includes a reaction chamber 402, including a reaction space 404, a susceptor 408 to support a substrate 410, a gas distribution assembly 412, a gas supply system 406, a plasma power source 414, and a vacuum source 420. System 400 can also include a controller 422 to control various components of system 400.

Reaction chamber 402 can include any suitable reaction chamber, such as a chemical vapor deposition (CVD) reaction chamber.

Susceptor 408 can include one or more heaters to heat substrate 410 to a desired temperature. Further, susceptor 408 can form an electrode. In the illustrated example, susceptor 408 forms an electrode coupled to ground 416.

Gas distribution assembly 412 can distribute gas to reaction space 404. In accordance with exemplary embodiments of the disclosure, gas distribution assembly 412 includes a showerhead, which can form an electrode. In the illustrated example, gas distribution assembly 412 is coupled to a power source 414, which provide power to gas distribution assembly 412 to produce a plasma with reaction space 404 (between gas distribution assembly 412 and susceptor 408). Power source 414 can be an RF power supply.

Gas supply system 406 can include one or more gas sources 424, 426, and 428 and a solid source 430. Gas sources 424, 426 can include, for example, an additive gas and/or a reactant gas as described herein. Gas source 428 can include, for example, an inert gas as described herein. Solid source 430 can include a vessel 432 and a carbon precursor as described herein. Vessel 432 can be heated to a temperature to heat the carbon precursor to a desired temperature, such as a temperature noted herein. In some cases, solid source 430 can include an initially-solid carbon precursor, which is dissolved in a solvent (e.g., an organic solvent), such as toluene, tetrahydronaphtalene, decane, trimethylbenzene, and indene. A shutoff valve 440 can be provided upstream of source 430. As illustrated, an inert gas from source 428 can be mixed with vaporized gas from source 430. Such mixture can then be introduced into reaction chamber 402. Further, lines 434, 436 and gas distribution assembly 412 can be heated—e.g., to above a condensation temperature of the carbon precursor—to prevent or mitigate undesired condensation of the carbon precursor.

Vacuum source 420 can include any suitable vacuum pump, such as a dry pump. Vacuum source 420 can be coupled to reaction chamber 402 via line 418 and controllable valve 438.

Controller 422 can be coupled to various valves, flowmeters (e.g., coupled to one or more of sources 424-430), heaters, thermocouples, and the like of system 400. Controller 422 can be configured to cause system 400 to perform various steps as described herein.

The example embodiments of the disclosure described above do not limit the scope of the invention, since these embodiments are merely examples of the embodiments of the invention. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the disclosure, in addition to the embodiments shown and described herein, such as alternative useful combinations of the elements described, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims. 

What is claimed is:
 1. A method of forming a carbon-containing layer on a surface of a substrate, the method comprising the steps of: providing a substrate within a reaction chamber of a reactor; heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules; providing the vaporized gas to the reaction chamber; and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate, wherein the carbon precursor comprises a carbon compound comprising one or more sp3 hybridization carbon bonds, and wherein the carbon compound comprises 10 or more carbon atoms.
 2. The method of claim 1, wherein the carbon compound comprises a cyclic compound.
 3. The method of claim 1, wherein the carbon compound is a solid at normal temperature and pressure.
 4. The method of claim 1, wherein a melting temperature of the carbon compound is greater than or equal to 210° C. at a pressure of 100 kPa.
 5. The method of claim 1, wherein the carbon compound sublimes.
 6. The method of claim 1, wherein the carbon compound comprises two or more sp3 hybridization carbon-carbon bonds.
 7. The method of claim 1, wherein the carbon compound comprises three or more sp3 hybridization carbon-carbon bonds.
 8. The method of claim 1, wherein a molecular weight of the carbon compound ranges from about 130 to about 220 Da.
 9. The method of claim 1, wherein the carbon compound can be represented by the chemical formula C_(n)H_(m)X_(z), wherein n is an integer greater than or equal to 10, m is an integer greater than or equal to 10, and z is an integer greater than or equal to zero.
 10. The method of claim 9, wherein X comprises one or more of O, N, F, S, Cl, and Br, in any combination.
 11. The method of claim 9, wherein n ranges from about 10 to about 12, m ranges from about 15 to about 22 and z ranges from zero to about
 5. 12. The method of claim 1, wherein the carbon compound comprises a hydrocarbon.
 13. The method of claim 1, wherein the step of polymerizing comprises forming a hard mask.
 14. The method of claim 1, further comprising a step of providing a reactant to the reaction chamber.
 15. The method of claim 14, further comprising a step of forming activated species from the reactant.
 16. The method of claim 14, wherein the reactant comprises an oxidizer.
 17. The method of claim 14, wherein the reactant comprises one or more of O₂, ozone, CO, CO₂, COS, NO_(x), and SO_(x).
 18. The method of claim 1, wherein the carbon compound is selected from the group consisting of adamantane, camphor, adamantanol, and acetamidoadamantane.
 19. A method of forming a structure comprising the method of claim
 1. 20. The method of claim 19, further comprising a step of depositing a layer of photoresist overlying the carbon-containing layer.
 21. The method of claim 19, further comprising a step of etching the carbon-containing layer.
 22. A structure formed according to the method of claim
 1. 23. The structure of claim 22, wherein a thickness of the carbon-containing layer is between about 10 and about 100, about 300 and about 1000, or about 1000 and about 2000 nm.
 24. The structure of claim 22, wherein an amount of hydrogen in the carbon-containing layer is less than 20 at %, less than 10 at %, or less than 5 at %.
 25. The structure of claim 22, wherein an extinction coefficient at 633 nm (k-value) of the carbon-containing layer is less than 0.05 or less than 0.2.
 26. The structure of claim 22, wherein a density of the carbon-containing layer is greater than 2.0 g/cc, greater than 2.3 g/cc, or greater than 2.6 g/cc.
 27. A system for performing the method of claim
 1. 